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1

Atomic-Scale Defects Involved in the Negative-Bias Temperature Instability

Campbell, Jason P., Lenahan, Patrick M., Cochrane, Corey J., Krishnan, Anand T., Krishnan, Srikanth

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2007

Language:

english

File:

PDF, 639 KB

english, 2007

2

Non-Ohmic electrical conductivity and giant dielectric constant in the quasi-one-dimensional semiconductor methyltriphenylarsonium ditetracyanoquinodimethanide

Lenahan, Patrick M., Rowland, T. J.

Journal:

Physical Review B

Year:

1981

Language:

english

File:

PDF, 856 KB

english, 1981

3

A Model for NBTI in Nitrided Oxide MOSFETs Which Does Not Involve Hydrogen or Diffusion

Lenahan, Patrick M., Campbell, Jason P., Krishnan, Anand T., Krishnan, Srikanth

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2011

Language:

english

File:

PDF, 340 KB

english, 2011

4

Band diagram for low-k/Cu interconnects: The starting point for understanding back-end-of-line (BEOL) electrical reliability

Mutch, Michael J., Pomorski, Thomas, Bittel, Brad C., Cochrane, Corey J., Lenahan, Patrick M., Liu, Xin, Nemanich, Robert J., Brockman, Justin, French, Marc, Kuhn, Markus, French, Benjamin, King, Sean

Journal:

Microelectronics Reliability

Year:

2016

Language:

english

File:

PDF, 2.16 MB

english, 2016

5

Distribution of the energy levels of individual interface traps and a fundamental refinement in charge pumping theory

Tsuchiya, Toshiaki, Lenahan, Patrick M.

Journal:

Japanese Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 1.48 MB

english, 2017

6

Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels

Anders, Mark A., Lenahan, Patrick M., Edwards, Arthur H., Schultz, Peter A., Van Ginhoven, Renee M.

Journal:

Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 882 KB

english, 2018

7

Wafer-Level near Zero Field Spin Dependent Charge Pumping: Effects of Nitrogen on 4H-SiC MOSFETs

Anders, Mark A., Lenahan, Patrick M., Ryan, Jason T.

Journal:

Materials Science Forum

Year:

2020

File:

PDF, 636 KB

2020

8

Growth and characterization of large crystals of methyltriphenylarsenium tetracyanoquinodimethane [Meø3As(TCNQ)2]

Patrick M. Lenahan, G. DePasquali

Journal:

Journal of Crystal Growth

Year:

1980

Language:

english

File:

PDF, 695 KB

english, 1980

9

Giant dielectric constant in the one-dimensional semiconductor Meφ3As (TCNQ)2

Patrick M. Lenahan, T.J. Rowland

Journal:

Solid State Communications

Year:

1981

Language:

english

File:

PDF, 432 KB

english, 1981

10

Fundamental differences in the nature of electrically active point-defects in plasma enhanced chemical vapor deposited and thermal oxide structures

William L. Warren, Patrick M. Lenahan

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 238 KB

english, 1989

11

Experimental evidence for two fundamentally different E′ precursors in amorphous silicon dioxide

William L. Warren, Patrick M. Lenahan, C. Jeffrey Brinker

Journal:

Journal of Non-Crystalline Solids

Year:

1991

Language:

english

File:

PDF, 937 KB

english, 1991

12

Lions Clubs International Foundation Core Four Photoscreening: Results From 17 Programs and 400,000 Preschool Children

Sean P. Donahue, John D. Baker, William E. Scott, Paul Rychwalski, Daniel E. Neely, Patrick Tong, Donald Bergsma, Deborah Lenahan, Dawn Rush, Ken Heinlein, Ron Walkenbach, Tammy M. Johnson

Journal:

Journal of American Association for Pediatric Ophthalmology and Strabismus

Year:

2006

Language:

english

File:

PDF, 96 KB

english, 2006

13

Do P[sub b1] centers have levels in the Si band gap? Spin-dependent recombination study of the P[sub b1] âhyperfine spectrumâ

Mishima, Tetsuya D., Lenahan, Patrick M., Weber, Werner

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 347 KB

english, 2000

14

Electron spin resonance evidence for the structure of a switching oxide trap: Long term structural change at silicon dangling bond sites in SiO2

Conley, John F., Lenahan, Patrick M., Lelis, Aivars J., Oldham, Timothy R.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 239 KB

english, 1995

15

Spin counting in electrically detected magnetic resonance via low-field defect state mixing

Cochrane, Corey J., Lenahan, Patrick M.

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.34 MB

english, 2014

16

ECS Transactions [ECS 219th ECS Meeting - Montreal, QC, Canada (May 1 - May 6, 2011)] - Electrically Detected Magnetic Resonance in Dielectric Semiconductor Systems of Current Interest

Lenahan, Patrick M., Cochrane, C.J., Campbell, J.P., Ryan, J.T

Year:

2011

Language:

english

File:

PDF, 1.24 MB

english, 2011

17

[IEEE 2013 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA, USA (2013.10.13-2013.10.17)] 2013 IEEE International Integrated Reliability Workshop Final Report - Atomic scale defects in MOS reliability problems

Lenahan, Patrick M.

Year:

2013

Language:

english

File:

PDF, 58 KB

english, 2013

18

[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Electrically detected magnetic resonance study of a near interface trap in 4H SiC MOSFETs

Cochrane, Corey J., Lenahan, Patrick M., Lelis, Aivars

Year:

2011

Language:

english

File:

PDF, 316 KB

english, 2011

19

[IEEE 2013 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA, USA (2013.10.13-2013.10.17)] 2013 IEEE International Integrated Reliability Workshop Final Report - Zero/low field SDR and SDT used for atomic scale probes of NBTI and TDDB

Cochrane, Corey J, Lenahan, Patrick M.

Year:

2013

Language:

english

File:

PDF, 729 KB

english, 2013

20

[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Spin dependent charge pumping: A new tool for MOS interface characterization

Bittel, Brad C., Lenahan, Patrick M., Ryan, Jason T., Fronheiser, Jody, Lelis, Aivars J.

Year:

2011

Language:

english

File:

PDF, 262 KB

english, 2011

21

[IEEE 2012 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA, USA (2012.04.15-2012.04.19)] 2012 IEEE International Reliability Physics Symposium (IRPS) - Evidence for Pb center-hydrogen complexes after subjecting PMOS devices to NBTI stress - A combined DCIV/SDR study

Aichinger, Thomas, Lenahan, Patrick M., Grasser, Tibor, Pobegen, Gregor, Nelhiebel, Michael

Year:

2012

Language:

english

File:

PDF, 635 KB

english, 2012

22

[IEEE 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) - Tampa, FL, USA (2013.06.16-2013.06.21)] 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) - Electron paramagnetic resonance as a probe of technologically relevant processing effects on CdTe solar cell materials

Pigott, Michael, Young, Liam, Lenahan, Patrick M., Halverson, Adam, Andreini, Kristian W., Korevaar, Bas A.

Year:

2013

Language:

english

File:

PDF, 2.50 MB

english, 2013

23

Structure of 6H silicon carbide/silicon dioxide interface trapping defects

Meyer, David J., Bohna, Nathaniel A., Lenahan, Patrick M., Lelis, Aivars J.

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 292 KB

english, 2004

24

Observation of trapping defects in 4H–silicon carbide metal-oxide-semiconductor field-effect transistors by spin-dependent recombination

Meyer, David J., Lenahan, Patrick M., Lelis, Aivars J.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 309 KB

english, 2005

25

[IEEE 2012 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA, USA (2012.10.14-2012.10.18)] 2012 IEEE International Integrated Reliability Workshop Final Report - A means to study reliability based defects in fully processed devices utilizing zero-field spin dependent transport

Cochrane, Corey J., Lenahan, Patrick M.

Year:

2012

Language:

english

File:

PDF, 462 KB

english, 2012

26

The Nature of the Deep Hole Trap in MOS Oxides

Witham, Howard S., Lenahan, Patrick M.

Journal:

IEEE Transactions on Nuclear Science

Year:

1987

Language:

english

File:

PDF, 674 KB

english, 1987

27

Color center formation in vacuum sintered Nd[sub 3x]Y[sub 3−3x]Al[sub 5]O[sub 12] transparent ceramics

Stevenson, Adam J., Bittel, Brad C., Leh, Christopher G., Li, Xin, Dickey, Elizabeth C., Lenahan, Patrick M., Messing, Gary L.

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 571 KB

english, 2011

28

Non-Ohmic Electrical Conduction in the Highly One-Dimensional Semiconductor Methyltriphenylarsonium Tetracyanoquinodimethane

Lenahan, Patrick M., Rowland, T. J.

Journal:

Physical Review Letters

Year:

1979

Language:

english

File:

PDF, 731 KB

english, 1979

29

A nitrogen-related deep level defect in ion implanted 4H-SiC pn junctions—A spin dependent recombination study

Aichinger, Thomas, Lenahan, Patrick M., Tuttle, Blair R., Peters, Dethard

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 597 KB

english, 2012

30

[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Electrically detected magnetic resonance studies of processing variations in 4H SiC based MOSFETs

Cochrane, Corey J., Lenahan, Patrick M., Lelis, Aivars J.

Year:

2007

Language:

english

File:

PDF, 186 KB

english, 2007

31

Relationship Between the 4H-SiC/SiO2 Interface Structure and Electronic Properties Explored by Electrically Detected Magnetic Resonance

Anders, Mark A., Lenahan, Patrick M., Cochrane, Corey J., J. Lelis, Aivars

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.18 MB

english, 2015

32

Defects in HfO2 Based Dielectric Gate Stacks

Lenahan, Patrick M., Ryan, Jason T., Cochrane, Corey J., Conley, John F.

Journal:

MRS Proceedings

Year:

2009

Language:

english

File:

PDF, 614 KB

english, 2009

33

ECS Transactions [ECS 219th ECS Meeting - Montreal, QC, Canada (May 1 - May 6, 2011)] - An Electron Paramagnetic Resonance Study of Defects in Interlayer Dielectrics

Bittel, Brad C., Pomorski, Thomas, Lenahan, Patrick M., King, Sean

Year:

2011

Language:

english

File:

PDF, 422 KB

english, 2011

34

EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors

Cochrane, Corey J., Bittel, Brad C., Lenahan, Patrick M., Fronheiser, Jody A., Matocha, Kevin, Lelis, Aivars J.

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 505 KB

english, 2010

35

Definitive Identification of an Important 4H SiC MOSFET Interface/Near Interface Trap

Cochrane, Corey J., Lenahan, Patrick M., Lelis, Aivars J.

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 880 KB

english, 2012

36

Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors

Meyer, David J., Bohna, N.A., Lenahan, Patrick M., Lelis, Aivars J.

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 238 KB

english, 2004

37

Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors

Cochrane, C.J., Lenahan, Patrick M., Lelis, Aivars J.

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 407 KB

english, 2009

38

Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination

Dautrich, Morgan S., Lenahan, Patrick M., Lelis, Aivars J.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 350 KB

english, 2006

39

Interface Defects and Negative Bias Temperature Instabilities in 4H-SiC PMOSFETs – A Combined DCIV/SDR Study

Aichinger, Thomas, Lenahan, Patrick M., Peters, Dethard

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 664 KB

english, 2013

40

Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors

Meyer, David J., Dautrich, Morgen S., Lenahan, Patrick M., Lelis, Aivars J.

Journal:

Materials Science Forum

Year:

2005

Language:

english

File:

PDF, 406 KB

english, 2005

41

Identification of Deep Level Defects in SiC Bipolar Junction Transistors

Lenahan, Patrick M., Pfeiffenberger, N.T., Pribicko, T.G., Lelis, Aivars J.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 306 KB

english, 2006

42

Electrically Detected Magnetic Resonance Studies of Processing Variations in 4H SiC Based MOSFETs

Cochrane, C.J., Lenahan, Patrick M., Lelis, Aivars J.

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 455 KB

english, 2009

43

Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect

Aichinger, Thomas, Lenahan, Patrick M.

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 1.08 MB

english, 2012

44

SPIE Proceedings [SPIE NDE for Health Monitoring and Diagnostics - San Diego, CA (Sunday 14 March 2004)] Nondestructive Detection and Measurement for Homeland Security II - Nonintrusive nondestructive method to detect fissile material

Jayaraman, Subash, Tittmann, Bernhard R., Shull, Peter J., Maillis, Georgios, Lenahan, Patrick M., Ze, Frederic, Doctor, Steven R., Bar-Cohen, Yoseph, Aktan, A. Emin, Wu, H. Felix

Year:

2004

Language:

english

File:

PDF, 393 KB

english, 2004

45

The Uses of Amateurs:Travel Writing as a Tool of Second Language Acquisition Research

Lenahan, Patrick

Journal:

English Academy Review

Year:

2015

Language:

english

File:

PDF, 703 KB

english, 2015

46

[IEEE 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) - South Lake Tahoe, CA, USA (2014.10.12-2014.10.16)] 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) - Quantitative electrically detected magnetic resonance for device reliability studies

Cochrane, Corey J., Anders, Mark, Mutch, Mike, Lenahan, Patrick

Year:

2014

Language:

english

File:

PDF, 1.02 MB

english, 2014

47

A Surprising Result: “Bulk” SiC Defects in the Negative Bias Instability in 4H-SiC MOSFETs

Anders, Mark A., Lenahan, Patrick M., Lelis, Aivars J.

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 428 KB

english, 2016

48

Magnetic Field Sensing with Atomic Scale Defects in SiC Devices

Cochrane, Corey J., Blacksberg, Jordana, Lenahan, Patrick M., Anders, Mark A.

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 949 KB

english, 2016

49

Ionizing Radiation Effects in 4H-SiC nMOSFETs Studied With Electrically Detected Magnetic Resonance

Waskiewicz, Ryan J., Anders, Mark A., Lenahan, Patrick M., Lelis, Aivars J.

Journal:

IEEE Transactions on Nuclear Science

Year:

2016

Language:

english

File:

PDF, 451 KB

english, 2016

50

Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide

Cochrane, Corey J., Blacksberg, Jordana, Anders, Mark A., Lenahan, Patrick M.

Journal:

Scientific Reports

Year:

2016

Language:

english

File:

PDF, 1.37 MB

english, 2016